We investigated a band gap shrinkage in both lattice-matched and compressive strained GaInAs/GaInAsP/InP multi-quantum well lasers. The band gap shrinkage is obtained from the broadening of the low energy side in the spectrum by considering effects of an intraband scattering and a fundamental band edge. It amounts to 20–25 meV at sheet carrier densities of above 1012 cm−2, and shows n1/1.3 dependence at low carrier densities and n1/3 dependence at higher densities. These dependencies agree well with theoretical predictions in the quantum well.
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Park et al. (1992) studied this question.
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