Pulsations of semiconductor lasers with a proton bombarded segment: Well-developed pulsations

We present an analytic theory of well-developed pulsations in semiconductor lasers with a proton bombarded segment. A rate equation model is used with the proton bombarded region modeled as a fast saturable absorber. We obtain a closed form solution for the pulse shape, width, and energy, as well as the pulsation rate. The pulses can be as short as the diode roundtrip time (∼10 ps). A simple pulsation condition is derived; it agrees with the previously determined small signal instability criterion. Pulsation does not require absorber cross section larger than gain cross section.