The gain spectral characteristics of 1.5 µm wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm, fabricated by electron beam lithography and 2-step organometallic vapor phase epitaxial growth, were measured at a temperature of 100 K and were compared with those of quantum-film lasers fabricated on the same wafer. It was found for the first time that the material gain spectrum of quantum-wire lasers was narrower than that of the quantum-film laser.
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Kojima et al. (1998) studied this question.
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