The response characteristics of a Pt/GaN Schottky barrier diode (SBD) to carbon monoxide (CO) gas have been investigated. The characteristics of a GaN-based SBD with a 30-nm-thick Pt catalyst were measured at 300 °C for various CO gas concentrations. The amplitude of the single exponential response of the current under reverse bias changed reasonably with CO gas concentration. We have proposed a parallel diode model to fit the observed response. Using this model, the absorption/desorption of gas molecules and change of the Schottky barrier height are estimated.
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Okada et al. (2011) studied this question.
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