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A room-temperature lasing-operation by current injection to Al 0.17 Ga 0.83 Sb/GaSb multi-quantum well (MQW) lasers grown by molecular beam epitaxy (MBE) is demonstrated. A pulsed threshold current density of 8.9 kA/cm 2 was obtained for the diode whose active layer consists of 16 periods of 91 Å thick GaSb well layers separated by 31 Å thick Al 0.17 Ga 0.83 Sb barrier layers. The observed lasing energy (0.753 eV) is 27 meV higher than the energy gap of GaSb, indicating the quantum size effect.
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Ohmori et al. (1984) studied this question.
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