Application of ENDOR‐Induced Electron Spin Resonance to the Study of Point Defects in Solids

The technique of ENDOR‐induced ESR (EI‐ESR) is applied to the investigation of several point defects in insulating crystals. It is shown that the lineshape of the EI‐ESR spectrum depends on the ENDOR line used for the experiment. The EI‐ESR technique allows the separation of overlapping ESR spectra in the presence of several defects. New applications are the selection of spin states and the determination of relative signs of spin‐Hamiltonian parameters, the selection of centre orientations and the assignment of nuclei in complex ENDOR spectra, and the determination of quadrupole interactions which are not resolved in the ENDOR spectrum.