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It is shown that a realistic estimate of semiconductor heterojunction valence-band offsets can be made from a simple analytic model which depends only on the empirical values of the optical dielectric constant and the lattice constant of the constituent materials. The band lineup is achieved without invoking interface dipoles and without any adjustable parameters. Numerical results are provided and compared with experiment and with theoretical results available in the literature.
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M. Jaroš (1988) studied this question.
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