Answers are grounded in this paper and cite their sources.
Surface antisite defects produce electronic energy levels in the band gaps of III-V compound semiconductors. These levels can pin the Fermi energy at metal-semiconductor interfaces and cause Schottky-barrier formation.
No takes yet. Share an insight, caveat, or question.
Allen et al. (1982) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: