We present calculations of the bound-state energy levels of ideal vacancies near the (110) surface of InP and GaAlAs. We find that there is a strong correlation between the the calculated position of the highest filled anion vacancy level in the neutral vacancy and the measured Fermi level at the surface. This correlation suggests that the recently proposed defect model of Schottky barrier formation is capable of accounting for the observed trends in Schottky barrier formation and that the states responsible in III-V semiconductors are related to defects which introduce dangling cation bonds.
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Daw et al. (1980) studied this question.
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