Molecular beam epitaxy has been used to grow good quality films of InGaAsP on InP substrates. The films have been characterized using infrared absorption, electroreflectance, x-ray diffraction, reflection electron diffraction, and Hall measurements. Lattice matching was achieved and room-temperature mobilities up to 4600 cm2 V−1 s−1 were measured.
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Holah et al. (1982) studied this question.
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