Complex defects introduced into Si by high-energy electron irradiation: Production rates of defects in n-Si

The n-type silicon crystals of about 0.15, 0.9, and 10 Ω cm (pulled material) and 120 Ω cm (float-zone material) are exposed to 2–9-MeV electron beams at total integrated fluxes up to about 1018 electrons/cm2. The production rates of each complex defect in irradiated silicon are investigated. They are obtained from the condition of charge neutrality by using the experimental values of the resistivity as a function of bombardment dose. The electron energy dependence and the impurity density dependence of the production rate are determined for each complex defect. The results suggest that a configuration of the defect states at Ec−0.3 eV may be associated with a phosphorus atom, and in the intrinsic region the two occupied and vacant states should be symmetrically located above and below the middle of the energy gap, respectively.