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The Hall effect in amorphous RE-TM (RE=Gd, Tb, Dy; TM=Fe, Ni) films with a perpendicular magnetization easy axis was measured. It was found that amorphous RE-Fe films exhibited a remarkable extraordinary Hall effect as observed previously for Gd-Co sputtered films, and that the observed Hall effect behavior depended much less on the RE element. It was also found that the Hall voltage in Gd-Ni films was two orders of magnitude smaller than that in RE-Fe films. These observations suggest that the TM plays a dominant role in the anomalous Hall voltage in RE-TM alloy systems.
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Mimura et al. (1976) studied this question.
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