Facile Synthesis of γ‐In₂Se₃ Nanoflowers toward High Performance Self‐Powered Broadband γ‐In₂Se₃/Si Heterojunction Photodiode

An effective colloidal process involving the hot‐injection method is developed to synthesize uniform nanoflowers consisting of 2D γ‐In 2 Se 3 nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In 2 Se 3 , a high‐quality γ‐In 2 Se 3 /Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long‐term durability. In addition, the γ‐In 2 Se 3 /Si heterojunction photodiode is self‐powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ‐In 2 Se 3 /Si heterojunction very interesting as highly efficient photodetectors.