Plastic Shottky barriers were fabricated using poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and aluminum as the p-type semiconductor and the metal, respectively, by a facile line-patterning technology in which multiple-line-patterning was utilized for the designed patterns. Based on the measurements of current–voltage and capacitance–voltage characteristics, various electrical parameters of the Shottky barriers were extracted. As a result, the barrier height, work function of the PEDOT:PSS and rectification ratio were 0.78, 4.8 eV and 1.6×102, respectively.
No takes yet. Share an insight, caveat, or question.
Yan et al. (2007) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: