Synthesis of nitrogen-doped monolayer graphene with high transparent and n-type electrical properties

A one-step approach is developed to synthesise a nitrogen-doped graphene (NG) membrane, which is derived from poly 4-vinyl pyridine (P4VP). High quality single layer N-doped graphene membrane with N content of 6.37% has been synthesized at 800 °C. Consequently, the electron mobility of the n-type FETs based on NG reaches as high as 365 cm ² V ⁻¹ s ⁻¹ , much higher than those of NGs previously reported.