The effect of ZnO active film quality on the low-frequency noise behavior in ZnO thin-film transistors has been investigated. The film crystalline is varied by differentiating the thickness and adding postannealing. To discriminate the origin of 1/f noise, the gate bias dependence of noise spectra is investigated. It is found that the number fluctuation noise model related with trapping/detrapping by traps near the interface becomes dominant as the crystal quality improves, which is also confirmed by another noise parameter, i.e., α Extracted αappcan also well explain the electrical characteristics.
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Jeong et al. (2011) studied this question.
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