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Polycrystalline bismuth telluride (Bi 2 Te 3 ) nanowires have been prepared by the step edge selective electrodeposition of Bi 2 Te 3 on highly oriented pyrolytic graphite (HOPG) surfaces. Bi 2 Te 3 nanowires were obtained from an aqueous plating solution containing Bi 3+ and HTeO 2 + using a three-step procedure: (1) potentiostatic oxidation of the graphite surface at +0.8 V (vs saturated calomel electrode, SCE), (2) potentiostatic nucleation of Bi 2 Te 3 at −0.6 V for 5 ms, (3) growth of Bi 2 Te 3 from these nuclei by cyclic electrodeposition (of both Bi 2 Te 3 and bismuth) and stripping (of bismuth only) between +0.30 V and −0.05 V at 20 mV s -1 . Control of the number of electrodeposition/stripping scans allowed the diameter of Bi 2 Te 3 nanowires to be specified in the range from 100 to 300 nm. Bi 2 Te 3 nanowires were narrowly dispersed in diameter (RSD dia = 10−20%), were up to 1.0 mm in length, and were organized into parallel arrays containing hundreds of wires.
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Menke et al. (2004) studied this question.
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