Electronic Conductivity, Seebeck Coefficient, and Defect Structure of LaFeO ₃

Electronic conductivity and Seebeck coefficients of LaFeO 3 were measured as a function of temperature (1000° to 1400°C) and P ( O 2 ) (10 5 to 10 −13 Pa). Electronic conduction was found to be n‐type in the lower P ( O 2 ) range, and p ‐type in a higher P(O 2 ) range. The calculated carrier mobilities suggest a hopping‐type conduction mechanism. The carrier concentrations were calculated as a function of P ( O 2 ) and the defect structure was described. It was found that the electrical properties of LaFeO 3 are determined not only by the concentration of oxygen vacancies, but also by the La/Fe ratio.