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January 1, 2019Journal of Materials Chemistry C

A flexible memory with low-voltage and high-operation speed using an Al ₂ O ₃ /poly(α-methylstyrene) gate stack on a muscovite substrate

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Abstract

A clear technical demonstration of the critical role of the blocking layers, which has never been addressed sufficiently in previous work.

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Cite This Study

He et al. (2019) studied this question.

synapsesocial.com/papers/6a78c1c54fe2e6ffd8ed9f5e https://doi.org/10.1039/c8tc05932b

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