Comparison of Properties of an Al[sub 2]O[sub 3] Thin Layers Grown with Remote O[sub 2] Plasma, H[sub 2]O, or O[sub 3] as Oxidants in an ALD Process for HfO[sub 2] Gate Dielectrics

Comparison of Properties of an Al2O3 Thin Layers Grown with Remote O2 Plasma, H2O , or O3 as Oxidants in an ALD Process for HfO2 Gate Dielectrics, Cho, Moonju, Park, Hong Bae, Park, Jaehoo, Lee, Suk Woo, Hwang, Cheol Seong, Jeong, Jaehack, Kang, Hee Sung, Kim, Young Wook