The spray pyrolysis technique is employed to prepare thin films of SnS on glass substrates and SnS 2 on glass as well as fluorine doped tin oxide (FTO) coated glass substrates. The pyrolysis temperatures of SnS and SnS 2 are 350 °C and 275 °C, respectively. The films are found to be n-type semiconductors. The SnS thin film is amorphous, whereas the SnS 2 shows polycrystalline structure and the calculated average grain size is 115 Å for SnS 2 on glass and 324 Å on the FTO substrate. From an analysis of the high absorption region data a direct-allowed transition at 2.44 eV has been observed for SnS 2 . In the optical investigations of SnS layers an non-direct-allowed transition at 1 eV is revealed. The corresponding absorption coefficients near the fundamental absorption edge are ~2 × 10 4 cm -1 and 4.6 × 10 3 cm -1 for SnS 2 and SnS thin films. The room temperature dark conductivity of SnS is of the order of 10 -3 -1 cm -1 and 10 -4 -10 -3 -1 cm -1 for SnS 2 films. The corresponding photoconductivity values of SnS, SnS 2 on glass and SnS 2 on FTO are ten, four and two times higher than the dark conductivity.
No takes yet. Share an insight, caveat, or question.
Thangaraju et al. (2000) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: