Data are presented demonstrating a low thermal resistance lithographic laser. An 8 µm vertical-cavity surface emitting laser defined using lithography and epitaxial crystal growth provides output power of 14 mW, slope efficiency of 0.88 W/A corresponding to differential quantum efficiency of 70% and power conversion efficiency of 26%. Low thermal resistance, even without heatsinking, results in high output power densities owing to better heat spreading through the epitaxial structure for small lasers.
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Demir et al. (2010) studied this question.
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