Epitaxial growth of silicene on ultra-thin Ag(111) films

Epitaxial growth of silicene on atomically flat ultra-thin Ag(111) films was investigated using scanning tunneling microscopy. The Ag films were prepared by low-temperature deposition of Ag on Si substrates, followed by soft annealing at room temperature. Patchy 4 × 4, √13 × √13, √7 × √7, and 2√3 × 2√3 silicene domains were nucleated on regions that were one monolayer lower than the pristine Ag surface after the initial morphological change had been completed. On the first-layer silicene containing the above domains, two types of √3 × √3 silicene domains (√3 × √3- α and β ) were formed in the second layer. A bias voltage-independent Moiré pattern was observed for the √3 × √3- α silicene, and a bias voltage-dependent standing wave pattern for the √3 × √3- β silicene. The √3 × √3- β silicene had a dispersion relation that could be fitted using a linear function, although the resulting Fermi velocity was twice as large as the expected value.