Answers are grounded in this paper and cite their sources.
Differences in the physical and chemical properties of Al 2 O 3 films on a Si wafer and a C x H y layer were investigated in the case of plasma-enhanced atomic layer deposition. The Al 2 O 3 film on the Si had a sharper interface and lower thickness than the Al 2 O 3 film on the C x H y . The amount of carbon-impurity near the interface was larger for Al 2 O 3 on the C x H y than for Al 2 O 3 on the Si. In order to understand these differences, the concentrations of Al, O, C, and Si atoms through the Al 2 O 3 films were evaluated by using x-ray photoelectron spectroscopy (XPS) depth profiling. The emission intensities of CO molecule were analyzed for different numbers of deposition cycles, by using time-resolved optical emission spectroscopy (OES). Finally, a growth mechanism for Al 2 O 3 on an organic layer was proposed, based on the XPS and OES results for the Si wafer and the C x H y layer.
No takes yet. Share an insight, caveat, or question.
Lee et al. (2017) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: