To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS)Pt/NbO₂/Ptdevice with a memory-switching (MS)Pt/Nb₂O₅/ Ptdevice and observe the suppression of the undesired sneak current. A simplerPt/Nb₂O₅/NbO₂/Ptbilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this can significantly reduce the fabrication complexity.
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Liu et al. (2011) studied this question.
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