A granular magnetic material, Co–Fe–Hf–O, has been developed-using dc pulsed magnetron reactive sputtering. The deposition rate is as high as 1.3nm∕s. The electrical and magnetic properties of Co–Fe–Hf–O film can be tuned by changing O2 during deposition. A highly resistive, magnetically soft film has been achieved in a small range of the O2∕(Ar+O2) gas flow ratio. The origin of the dependence of magnetic and electrical properties of this material is studied and explained by monitoring the evolution of the film microstructure, using x-ray diffraction and transmission electron microscopy.
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Li et al. (2005) studied this question.
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