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The infrared-active localized modes of oscillation of defect-oxygen complexes in electron-irradiated and neutron-irradiated silicon containing oxygen are reported. Behavior with heat treatment and relative intensities show the existence of a large number of complexes besides the Si-B1 center responsible for the line at 835 cm^-1. Neutron-irradiated silicon exhibits satellite lines close to the 835 cm^-1 line when such specimens are annealed above 473^∘{}K. Isochronal-annealing studies indicate that the satellite centers are not associated with the Si-B1 center. Multiple-vacancy centers in association with dispersed oxygen may account for the satellites.
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Ramdas et al. (1966) studied this question.
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