The lack of energy reference level for deep levels, which has been one of the major difficulties in previous deep level research, is overcome by Hasegawa-Ohno's hybrid orbital energy level, E HO recently found for insulator-semiconductor and metal-semiconductor interfaces. E HO is shown to serve as the energy reference for DX centers and EL2 donors in the major III-V compound semiconductors and their alloys. Based on the novel alignment of DX centers with respect to E HO a proposal is made that the DX center is related to the anti-bonding state formed by the substitutional donor impurity atom itself.
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Hasegawa et al. (1986) studied this question.
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