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The electronic and ionic conduction across grain‐boundary (GB) space‐charge depletion layers in acceptor‐doped SrTiO 3 ceramics have been investigated by admittance analysis in the time domain. The dependence on the acceptor concentration, the oxygen partial pressure during equilibration, and the temperature dependence of the GB conductivity are discussed and interpreted in terms of a defect‐chemistry model of the GB region using a numerical simulation technique.
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Vollmann et al. (1997) studied this question.
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