A high quality Si3N4/Si/p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 × 1010 eV–1cm–2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85 mS/mm has been fabricated using this ex-situ growth approach.
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Chen et al. (1997) studied this question.
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