Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 1, 1979Journal of Applied Physics

Investigation of heterojunctions for MIS devices with oxygen-doped AlxGa1−xAs on n-type GaAs

View Full Paper
Ask AI
Bookmark
Share

Authors

HCH. C. CaseyKansas State UniversityACA. Y. ChoAT&T (United States)DLD. V. LangAT&T (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Casey et al. (1979) studied this question.

synapsesocial.com/papers/6a7a7eeb64a2339647024bechttps://doi.org/10.1063/1.326343
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Evidence for low surface recombination velocity on n-type InP1977 · 244 citations
  2. 2Measurement of MIS capacitors with oxygen-doped AlxGa1−xAs insulating layers on GaAs1978 · 19 citations
  3. 3Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe1976 · 197 citations
  4. 4GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature1970 · 131 citations
  5. 5Refractive Index of AlAs1971 · 183 citations