Solar-blind photodetectors are designed from individual In2Ge2O7 nanobelts using a standard photolithography technique. The detectors demonstrated high sensitivity and selectivity towards the solar-blind spectrum, fast response and decay times ∼ 3 ms, high responsivity ∼ 3.9 × 105 A W−1, and high quantum efficiency ∼2.0 × 108%.
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Li et al. (2010) studied this question.
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