In this article, we have proposed a nanostructured near-ultraviolet photodetector (<400nm) based on the ZnO nanorod/polyfluorene hybrid by solution processes at low temperature. The current-voltage characteristic of the hybrid device demonstrates the typical pn-heterojunction diode behavior, consisting of p-type polymer and n-type ZnO nanorods, respectively. The relative quantum efficiencies of the hybrid device exhibit a nearly three order difference while illuminated under UV and visible light, respectively. The responsivity for the device can reach to 0.18A∕W at 300nm by applying a bias of −2V, which provides a route to fabricate a low-cost near-UV photodetector.
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Lin et al. (2008) studied this question.
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