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In exploring the dynamics of dissociative chemisorption of O2 on clean and O-covered Cu(001), we demonstrate that the chemisorption is very sensitive to uniaxial tensile stress within an elastic limit. The stress enhances the dissociative chemisorption on clean Cu(001) when the translational energy of incident O2 is below 250 meV, and suppresses it when the energy is above 250 meV. In the case of an oxygen-covered Cu(001)- (2squareroot2 x squareroot2) surface, the dissociative adsorption probability of O2 decreases as the stress increases. The effect of external stress on the O2 dissociation dynamics is different between clean and O-covered surfaces.
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Uesugi-Saitow et al. (2002) studied this question.
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