We examine the origins of threshold voltage (VTH)variability in planar ferroelectric FETs (FeFETs) considering process variations and source–drain channel percolation. Using a percolation-aware physics-based multidomain FeFET model, we are able to capture theVTHstatistics measured on fabricated devices across different channel dimensions. We show that the bimodalVTHdistribution observed in large devices can be explained by percolation, while the transition to monomodal distribution in scaled devices is qualitatively reproduced by the overlapping Pelgrom-type and percolative variabilities in the model. We further demonstrate that in terms of device geometry, the percolation-related FeFETVTHvariability is minimized for a channel aspect ratio equal to 1.
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Kaczmarek et al. (2023) studied this question.