Electron Hall mobility of n-GaN

It is known that recently published electron Hall mobility data by J. G. Kim, A. C. Frenkel, H. Liu, and R. M. Park [Appl. Phys. Lett. 65, 91 (1994)] for cubic GaN at 300 K are in excellent agreement with theoretical calculations of Hall mobility for uncompensated material. The Hall scattering factor is calculated and Hall effect free-electron concentration data are corrected for samples with free-electron concentrations of 7.24×1017 cm−3 and 1.74×1018 cm−3. The corresponding experimental/theoretical Hall mobility is 760/744 and 530/543. Hence, agreement between theory and experiment is demonstrated within 2.5%.