The defects at perovskite film surface could be passivated effectively using a derivative of polyhedral oligomeric silsesquioxane with an amino-group (NH ₂ -POSS). The extremely low trap-state energy level (0.045 eV) was obtained by temperature-dependent admittance measurements. Both stability and efficiency in devices have been approved.
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Liu et al. (2018) studied this question.
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