β-Ga2O3 and its solid solutions –@-(AlxGa1-x)2O3 are considered as potential candidate materials for next generation power devices due to their ultra-wide bandgaps (4.85.5.6 eV) and large breakdown electric field (.8 MVcm-1). Wafers prepared from bulk crystals constitute a foundation in a device fabrication chain. The present report briefly discusses thermodynamics, challenges in growing bulk crystals from the melt by different methods, which enable at least 2-inch diameter wafers, crystal structural quality, electrical properties, and factors affecting crystal growth costs.
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Zbigniew Galazka (2025) studied this question.
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