Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy

Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of ∼240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was ≤11 ps and is indicative of a high level of nonradiative Shockley–Read recombination.