Growth of Carbon Nanowalls on a SiO₂ Substrate by Microwave Plasma-Enhanced Chemical Vapor Deposition

We investigated the growth process of carbon nanowalls (CNWs) on a SiO 2 substrate by microwave plasma-enhanced chemical vapor deposition (MPECVD). It is revealed that the CNWs are grown at the fine-textured structure on the SiO 2 and the growth process does not require the catalyst. The CNW initially has a semicircular shape. The height, thickness, and mesh size increase with growth time. It is found that the height of CNWs as a function of time obeys the square root law. Extremely high growth rate, approximately 10 µm/h, is achieved, in contrast to previous studies.