Analysis and simulation of channel and source-drain contact noise in Indium-Tin-Zinc-Oxide thin-film transistors

The channel and source-drain contact noise in indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs) are measured and simulated using the BSIM-BULK model. The noise performance of ITZO TFTs is primarily dominated by 1/f noise. At low gate voltages, low-frequency noise is dominated by channel noise, which can be explained by McWhorter’s (∆N) theory. The drain current noise power spectral density (S ID ) is a function of gate voltage and drain current, reflecting the power distribution of noise at different frequencies. As gate voltage increases, the slope of the normalized S ID with effective gate voltage changes from −2 to 2, indicating that contact noise becomes dominant. It can be explained by the Hooge’s empirical equation. Furthermore, channel noise and contact noise are simulated in the sub-threshold and linear region of ITZO TFTs using the BSIM-BULK model.