Current-noise-power spectra of amorphous silicon thin-film transistors

Current-noise-power spectra of thin-film transistors (TFTs) fabricated from hydrogenated amorphous silicon were measured. TFTs with aspect ratios ranging from 1:1 to 16:1 were examined in both the conducting and nonconducting modes. In the conducting mode, the noise levels could be predicted to within an order of magnitude by theories developed for crystalline metal-oxide field-effect transistors. In the nonconducting mode, the noise was found to scale with the TFT leakage current in a power-law fashion.