We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
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Zheng et al. (2011) studied this question.
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