The effect of hydrogen pressure on the hydrogen overvoltage on bright, active rhodium was determined. The data indicated that the overvoltage mechanism was controlled by the step. Kinetic parameters for the mechanism were quantitatively determined including the surface coverage with adsorbed atomic hydrogen. A Langmuir adsorption isotherm resulted from the relationship between surface coverage with atomic hydrogen at equilibrium and the partial pressure of molecular hydrogen above the solution.
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Sigmund Schuldiner (1960) studied this question.