We have demonstrated that the electronic and magnetic properties of graphene sheet can be delicately tuned by surface modification. Applying an external electric field to a fully hydrogenated graphene sheet can unload hydrogen atoms on one side, while keeping the hydrogen atoms on the other side, thus forming a half-hydrogenated graphene sheet, where the unpaired electrons in the unsaturated C sites give rise to magnetic moments, coupled through extended p-p interactions. Furthermore, the electronic structure of the resulting half-hydrogenated graphene sheet can be further tuned by introducing F atoms on the other side, making a nonmagnetic semiconductor with a direct band gap.
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Zhou et al. (2009) studied this question.
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