Spatially varied activation of ion-implanted As during the regrowth of amorphous layers in Si

He backscattering technique and sheet-resistivity measurements show that the electrical activation of As implanted in (100) and (111) Si and annealed at relatively low temperatures (500–600 °C) takes place from the vicinity of the crystalline substrate Si in the As profile. This is accompanied by the regrowth of the implantation-induced amorphous layer. The annealing temperature required for both the activation and the regrowth is dose dependent. No defect-induced diffusion of As has been observed in these annealing processes.