The effect of annealing a W-GaAs (Se + implanted) Schottky diode at high temperatures was investigated. The diode showed an excellent stability against annealing. The ideal factor n and the barrier height φ B of the diode stayed more or less constant at values of 1.1–1.2 and 0.73 V, respectively, for the temperature variation of 800°C–950°C. Using He + backscattering analysis, it was shown that the interdiffusion in W and GaAs couples takes place at 900°C.
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Matsumoto et al. (1982) studied this question.
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