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A covering of an alumina insulating layer was deposited on the top of a C60 thin-film field-effect transistor (FET) by rf magnetron sputtering with Ar gas, in order to passivate the FET action from the degradation due to oxygen adsorption. The deposited alumina was amorphous and slightly oxygen deficient from the stoichiometry. The stability of FET action in air was considerably improved and no degradation has been detected even for more than one month.
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Horiuchi et al. (2002) studied this question.
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