The Si 3 N 4 thin film is prepared by MWECR-PECVD at different deposition temperature and the structure of the Si 3 N 4 thin film is investigated. The results indicate that the structure of the Si 3 N 4 thin film prepared at low deposition temperature is in the amorphous phase. However, when the deposition temperature increases to 280°C, the Si 3 N 4 thin film changes to crystalline α-Si 3 N 4 . With a further increase of the deposition temperature, the grain of the Si 3 N 4 thin film becomes more fine, uniform and flat. XRD analysis shows that the structure of the Si 3 N 4 thin film prepared at 280°C is of a crystalline structure.
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Xiao et al. (2004) studied this question.