A new type of AlGaAs injection laser is described. The structure consists of alternating p- and n-type layers of GaAs and Alx Ga1−xAs . The electrical mode of operation of the device is that of a Shockley diode (SCR). Optically the device operates as a large optical cavity. Single transverse mode operation was observed with optical cavities larger than 4 μm.
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Katz et al. (1980) studied this question.
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